MTBF

1500000 hours

Typ

SATA SSD

Marknad

Consumer

Kapacitet

250 GB

NAND-typ

V-NAND

DRAM-cache

Yes

Läshastighet

560 MB/s

Kontroller

Samsung MKX Controller

Kryptering

AES 256-bit Encryption (Class 0),TCG/Opal, IEEE1667 (Encrypted drive)

Formfaktor

2.5 inch

Skrivhastighet

530 MB/s

DRAM-cachetyp

DDR4

Slumpmässig läsning (IOPS)

98000 IOPS

Slumpmässig skrivning (IOPS)

88000 IOPS

NAND-tillverkare

Samsung

DRAM-kapacitet

512 MB

Kontrollertillverkare

Samsung

Övriga specifikationer

Vikt

Approx. 45.0g Weight

Shock

1,500 G & 0.5 ms (Half sine)

USP 1

Samsung V-NAND-teknik

USP 2

Upp till 560MB/s sekventiell läsning och 530MB/s skrivning

USP 3

5 års begränsad garanti

Kapacitet

250 GB (1 GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)

Controller

Samsung MKX Controller

Formfaktor

2.5 inch

Gränssnitt

SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface

Highlight 1

Optimerad prestanda

Highlight 2

Hög tillförlitlighet

Highlight 3

6:e gen V-NAND SSD

WWN Support

World Wide Name supported

Cache Memory

Samsung 512 MB Low Power DDR4 SDRAM

TRIM Support

TRIM Supported

Applikationer

Client PCs

Management SW

Magician Software for SSD management, Data Migration Software for SSD upgrade

Mått (BxHxD)

100 X 69.85 X 6.8 (mm)

Storage Memory

Samsung V-NAND 3bit MLC

Sequential Read

Up to 560 MB/s Sequential Read * Performance may vary based on system hardware & configuration

Arbetstemperatur

0 - 70 ℃ Operating Temperature

Installation Kit

Not Available

Sequential Write

Up to 530 MB/s Sequential Write * Performance may vary based on system hardware & configuration ** Measured with Intelligent TurboWrite technology being activated

Allowable Voltage

5V ± 5% Allowable voltage

S.M.A.R.T Support

S.M.A.R.T Supported

Encryption Support

AES 256-bit Encryption (Class 0),TCG/Opal, IEEE1667 (Encrypted drive)

Reliability (MTBF)

1.5 Million Hours Reliability (MTBF)

Random Read (4KB, QD1)

Up to 13,000 IOPS Random Read * Performance may vary based on system hardware & configuration ** Measured with Intelligent TurboWrite technology being activated

GC (Garbage Collection)

Auto Garbage Collection Algorithm

Random Read (4KB, QD32)

Up to 98,000 IOPS Random Read * Performance may vary based on system hardware & configuration ** Measured with Intelligent TurboWrite technology being activated

Random Write (4KB, QD1)

Up to 36,000 IOPS Random Write * Performance may vary based on system hardware & configuration ** Measured with Intelligent TurboWrite technology being activated

Power consumption (Idle)

Max. 30 mW * Actual power consumption may vary depending on system hardware & configuration

Random Write (4KB, QD32)

Up to 88,000 IOPS Random Write * Performance may vary based on system hardware & configuration ** Measured with Intelligent TurboWrite technology being activated

Device Sleep Mode Support

Ja

Average Power Consumption (system level)

Average: 2.2 W *Maximum: 3.5 W (Burst mode)* Actual power consumption may vary depending on system hardware & configuration